Hello and Welcome
to
VISSS Web-Site,
2964-2966 Scott Blvd.
Santa Clara, CA 95054-3322
Tel:(408)-986-8026
Fax:(408)-986-8027
E-Mail:[email protected]
VISSS -http://members.aol.com/visss Research and Development Laboratories for semiconductor, optoelectonics, sensors and microwave technologies. We had succesfully cooperated with Hughes Power, Moxtek and NASA to develop 0.2 micron X-ray diffraction gratings, had cooperated with Cherry Semiconductor, Ford Motors and Motorola to develop thin film technologies for automotive applications. VISSS facilities had been audited and approved by Ford Motors and Motorola. Had worked with Rockwell on projects involving high temperature pressure sensors for rocket fuel injectors. Received from Rockwell letter of appreciation for quality and technology. Has designed a device and developed related advanced technology for Boeing 777 airplane and become sole source for that component. Received letter of congratulation from Boeing, for quality and achieving a ZERO DEFECT level. VISSS is working towards ISO9001 qualification.
VISSS was founded in 1983 in Silicon Valley, CA and is dedicated to actively participate and successfully address the needs of the microelectronic industry in the following areas of activity:
VISSS is
cooperating with its customers from proof-of-concept, basic research, to
technology transfer.
VISSS
has a broad spectrum of in house capabilities as well as cooperations with
various subcontractors which allows for sophisticated research and technology
development to be performed in a more timely and more cost effective manner.
VISSS
as a division of VISSS INC,
http://members.aol.com/visss
is an affiliate member of the SEMICONDUCTOR
RESEARCH CORPORATION
, MEMS
(http://mems.isi.edu/mems/yp/HTE.html),
IEEE & AMERICAN VACUUM SOCIETY.
If you and your company is currently
involved or contemplates R&D related to semiconductor devices or technologies,
you may consider using VISSS
expertise and capabilities. You may contact us and discuss your application
in the strictest confidentiality, at [email protected]
VISSS IN HOUSE CAPABILITIES | |
CIRCUIT DESIGN | P-SPICE, MICROSIM, ORCAD |
LAYOUT DESIGN | L-EDIT, GDS2, ACAD, ORCAD |
PROCESS SIMULATION | SUPREME |
MASK MANUFACTURING | 4X, 5X,10X STEPPER |
DIFFUSIONS/OXIDATIONS | 6 DIFFUSION TUBES |
LPCVD | 2 REACTORS |
PECVD | APPLIED MAT. |
PHOTOLITHOGRAPHY | CANON, PERKIN ELMER, COBILT, 10X STEPPER |
PLASMA ETCH | PLASMATHERM, TEGAL,LFE, PLASMALAB |
SPUTTERING | 3XCVC 601 MAGNETRON: |
ELECTROPLATING | GOLD |
SCREEN PRINTING | CW PRICE, AMI PRESCO |
DICING | MICROAUTOMATION |
WIRE BONDING | EMB, K&S |
4PP MEASUREMENT | FLUKE, VICKERS |
CD MEASUREMENT | NANOMETRICS NANOLINE |
CURVE TRACER | TEKTRONIX 577 |
PARAM. ANALYZER | HP-4145B |
ELECTRON MICROSCOPE | HITACHI |
X-RAY SPECT. ANALYZER | KEVEX |
LASER TRIMMING | ISI |
VISSS produces high quality sputter-deposited thin films on substrates as follows: silicon, Al2O3 ceramics, sapphire, aluminum nitride, PZT, polyimide, PTFE, etc...
VISSS THIN FILMS CAPABILITIES | |
RESISTIVE FILMS | High stability, Laser trimmable, Low TCR |
NiCr | 5, 10, 25,...200, 300, 400 ohms/sq, +/-10 to +/-100ppm/degC |
TaN2 | 25,50,500,1000, to 2500 ohms/sq, +/-5 to +/-150ppm/degC |
SiCr | 0.5K, 1K, 2.5K, 5K, 10k,20K ohms/sq, +/-10 to +/-200ppm/degC |
DIFFUSION BARRIER METALS | Ni, Mo,Pt, Pd, Ta, Ti, TiW, TiNx, TiW:N..... |
ADHESION LAYERS | Cr, Mo, Ni, NiCr, Si, Ti, TiW,TiNx.... |
CONDUCTIVE LAYERS | Al, Au, beta-Ta, Cu, Ni, Sn, SnPb, Zr... |
NITRIDE AND OXIDE FILMS | AlN, Fe2O3, Si3N4 |
VISSS can help customers solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations.
VISSS THIN FILMS PROCESSES | |
PLATINUM SILICIDE | |
TiW/Au METALIZATION FOR BIPOLAR AND DMOS RF DEVICES | |
Ti/Ni/Ag BACKSIDE METALIZATIONS FOR SOFT SOLDER DIE ATTACHING | |
Ti/Ni/Ag LIFT-OFF PROCESS | |
Ti/Pd/Au LIFT-OFF PROCESS | |
Au BACKSIDE METALIZATION | |
Au BUMP PROCESS FOR FLIP CHIP APPLICATIONS | |
SOLDER BUMP PROCESS FOR FLIP CHIP APPLICATONS |
If you and your company is currently involved
or contemplates R&D related to semiconductor devices or technologies,
you may consider using VISSS
expertise and capabilities. You may contact us and discuss your
application in the strictest confidentiality, at [email protected]
Thank you for your interest in VISSS
capabilities. We look forward to see
you again at this site.
In the mean time, we invite you to find more information about the VISSS
Companies:
USMICROWAVES - http://members.aol.com/usmicrows Designs and manufactures Microwave Thin Film Circuits, MOS microwave capacitors, ceramic capacitors, high Q spiral inductors, microwave thin film resistors and resistor networks, biasing silicon thin film resistors and resistor networks, attenuators, couplers, custom SAW devices, schottky diodes, PIN diodes, RF power bipolar transistors, custom and standard integrated bipolar microwave amplifiers, mixers, oscillators. Had delivered components for Patriot missile program as well for AMRAM missile program. Had successfully worked on projects for Loral, Samsung, Hyundai, LGE.
SEMICONWEALTH - http://members.aol.com/semiconwel Designs and manufactures Integrated Passive Networks. This technology allows a dramatic reduction of the assembly cost, saves space and weight and reduces the overall number of passive components on a board, by integrating them on a single surface mount package. Resistors, Capacitors, Inductors and Diodes are all integrated in one package. The addition of Diodes, allows on-board ESD protection as well as improved EMI/RFI immunity as well as lower levels of electromagnetic emission. Currently an approved vendor for Acer, Cisco, Litton, Liteon, Tatung and TwinHead, SEMICONWEALTH components are used next to Intel microprocessors, SDRAM, disc drives, ZIP drives and SCSI connectors.
SEMICONIX - http://members.aol.com/semiconix Designs and manufactures standard and custom Bipolar and CMOS Analog Integrated Circuits. The main difference from other manufacturers are as follows: - use of an all ion Implanted precision high speed bipolar processes. - use of 0.2 ohm/sq silicided CMOS Gate, which allows manufacturing of 100X faster analog and digital CMOS circuits and flexibility of an extra level of interconnection comparing to current CMOS technologies that still use 20 ohms/sq polysilicon. - use of low TCR, ultra-stable high sheet resistance Thin Film Resistor technology (from 1Kohm/sq to as high as 50Kohms/sq and even 100Kohms/sq). - use of high reliability, 2 levels, GOLD interconnection instead of classical Aluminum. These capabilities allow SEMICONIX to produce high reliability, high density and high performance Analog and Digital components, from discrete devices to Integrated Circuits, suitable for space applications and in general for demanding or very harsh conditions.
Best regards,
Sincerely yours,
Serban Porumbescu
President
Please, contact us at e-mail: [email protected]
Last updated: February 09, 1999